Modification of monolayer 1T-VSe2 by selective deposition of vanadium and tellurium

Hetero-structures of transition metal dichalcogenide (TMD) layers offer vast possibilities new materials properties. The growth behaviors such TMD hetero-structures can be complex. In this study, we report the structure modification a VSe2 monolayer by molecular beam deposition Te, V, or both. With typical temperature 300 °C and nominal flux rate, found that Te leaves intact. Vanadium deposition, in contrast, leads to small clusters ordered stripes along well-defined directions. charge density wave symmetry surprisingly changes regions enclosed vanadium stripes. V co-deposition, dramatic change surface (2 × 1) phase is observed. This study illustrates unexpected complexities involved preparing even simple bilayer hetero-structure, as VTe2/VSe2.